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Toshiba Semiconductor and Storage SSM5H16TU,LF
MOSFET N-CH 30V 1.9A UFV
Manufacturer # :SSM5H16TU,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM5H16TU,LF-DS
Datasheet :
SSM5H16TU,LF Datasheet
SSM5H16TU,LF DatasheetCustomer # :
Description : MOSFET N-CH 30V 1.9A UFV
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4590 | $ 0.46 |
| 10+ | $ 0.3195 | $ 3.2 |
| 100+ | $ 0.1980 | $ 19.8 |
| 500+ | $ 0.1584 | $ 79.2 |
| 1000+ | $ 0.1287 | $ 128.7 |
In Stock: 7777
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.459
Total :$ 0.46
Delivery :
Payment :
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SSM5H16TU,LF information
Toshiba Semiconductor and Storage SSM5H16TU,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:6-SMD (5 Leads), Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFV
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:1.9A (Ta)
- Rds On ( Max) @ Id, Vgs:133mOhm @ 1A, 4V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:1.9 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:123 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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