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Toshiba Semiconductor and Storage SSM5G10TU(TE85L,F)
MOSFET P-CH 20V 1.5A UFV
Manufacturer # :SSM5G10TU(TE85L,F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM5G10TU(TE85L,F)-DS
Datasheet :
SSM5G10TU(TE85L,F) Datasheet
SSM5G10TU(TE85L,F) DatasheetCustomer # :
Description : MOSFET P-CH 20V 1.5A UFV
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3780 | $ 0.38 |
| 10+ | $ 0.3195 | $ 3.2 |
In Stock: 1540
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.378
Total :$ 0.38
Delivery :
Payment :
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SSM5G10TU(TE85L,F) information
Toshiba Semiconductor and Storage SSM5G10TU(TE85L,F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-SMD (5 Leads), Flat Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFV
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:P-Channel
- F E T Feature:Schottky Diode (Isolated)
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:1.5A (Ta)
- Rds On ( Max) @ Id, Vgs:213mOhm @ 1A, 4V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:6.4 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:250 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4V
- Vgs ( Max):±8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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