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Toshiba Semiconductor and Storage SSM4K27CTTPL3
MOSFET N-CH 20V 500MA CST4
Manufacturer # :SSM4K27CTTPL3
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM4K27CTTPL3-DS
Datasheet :
SSM4K27CTTPL3 Datasheet
SSM4K27CTTPL3 DatasheetCustomer # :
Description : MOSFET N-CH 20V 500MA CST4
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.3318 | $ 3.32 |
| 10000+ | $ 0.1659 | $ 1659 |
| 30000+ | $ 0.1638 | $ 4914 |
| 50000+ | $ 0.1392 | $ 6960 |
| 100000+ | $ 0.1370 | $ 13700 |
In Stock: 54
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.3318
Total :$ 0.33
Delivery :
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SSM4K27CTTPL3 information
Toshiba Semiconductor and Storage SSM4K27CTTPL3 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:4-SMD, No Lead
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:CST4 (1.2x0.8)
- Power Dissipation ( Max):400mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:500mA (Ta)
- Rds On ( Max) @ Id, Vgs:205mOhm @ 250mA, 4V
- Vgs(th) ( Max) @ Id:1.1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:174 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4V
- Vgs ( Max):±12V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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