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Toshiba Semiconductor and Storage SSM3K36MFV,L3F
MOSFET N-CH 20V 500MA VESM
Manufacturer # :SSM3K36MFV,L3F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3K36MFV,L3F-DS
Datasheet :
SSM3K36MFV,L3F Datasheet
SSM3K36MFV,L3F DatasheetCustomer # :
Description : MOSFET N-CH 20V 500MA VESM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.0884 | $ 0.88 |
| 8000+ | $ 0.0589 | $ 471.2 |
| 16000+ | $ 0.0509 | $ 814.4 |
| 24000+ | $ 0.0500 | $ 1200 |
| 56000+ | $ 0.0414 | $ 2318.4 |
In Stock: 21977
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0884
Total :$ 0.09
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SSM3K36MFV,L3F information
Toshiba Semiconductor and Storage SSM3K36MFV,L3F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-723
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:VESM
- Power Dissipation ( Max):150mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:500mA (Ta)
- Rds On ( Max) @ Id, Vgs:630mOhm @ 200mA, 5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:1.23 nC @ 4 V
- Input Capacitance ( Ciss) ( Max) @ Vds:46 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 5V
- Vgs ( Max):±10V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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