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Toshiba Semiconductor and Storage SSM3K315T(TE85L,F)
MOSFET N-CH 30V 6A TSM
Manufacturer # :SSM3K315T(TE85L,F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3K315T(TE85L,F)-DS
Datasheet :
SSM3K315T(TE85L,F) Datasheet
SSM3K315T(TE85L,F) DatasheetCustomer # :
Description : MOSFET N-CH 30V 6A TSM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 1.1600 | $ 1.16 |
In Stock: 1452
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.16
Total :$ 1.16
Delivery :
Payment :
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SSM3K315T(TE85L,F) information
Toshiba Semiconductor and Storage SSM3K315T(TE85L,F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TSM
- Power Dissipation ( Max):700mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:6A (Ta)
- Rds On ( Max) @ Id, Vgs:27.6mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:10.1 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:450 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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