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Toshiba Semiconductor and Storage SSM3K2615R,LF
MOSFET N-CH 60V 2A SOT23F
Manufacturer # :SSM3K2615R,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3K2615R,LF-DS
Datasheet :
SSM3K2615R,LF Datasheet
SSM3K2615R,LF DatasheetCustomer # :
Description : MOSFET N-CH 60V 2A SOT23F
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2362 | $ 2.36 |
| 3000+ | $ 0.1312 | $ 393.6 |
| 6000+ | $ 0.1213 | $ 727.8 |
| 9000+ | $ 0.1122 | $ 1009.8 |
| 24000+ | $ 0.1089 | $ 2613.6 |
In Stock: 36703
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2362
Total :$ 0.24
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SSM3K2615R,LF information
Toshiba Semiconductor and Storage SSM3K2615R,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-3 Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23F
- Power Dissipation ( Max):1W (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Ta)
- Rds On ( Max) @ Id, Vgs:300mOhm @ 1A, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:150 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):3.3V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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