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Toshiba Semiconductor and Storage SSM3K16CT(TPL3)
MOSFET N-CH 20V 100MA CST3
Manufacturer # :SSM3K16CT(TPL3)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3K16CT(TPL3)-DS
Datasheet :
SSM3K16CT(TPL3) Datasheet
SSM3K16CT(TPL3) DatasheetCustomer # :
Description : MOSFET N-CH 20V 100MA CST3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2350 | $ 2.35 |
| 10000+ | $ 0.1175 | $ 1175 |
| 20000+ | $ 0.1073 | $ 2146 |
| 30000+ | $ 0.1020 | $ 3060 |
| 50000+ | $ 0.0961 | $ 4805 |
In Stock: 1018
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.235
Total :$ 0.23
Delivery :
Payment :
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SSM3K16CT(TPL3) information
Toshiba Semiconductor and Storage SSM3K16CT(TPL3) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Not For New Designs
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SC-101, SOT-883
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:CST3
- Power Dissipation ( Max):100mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:100mA (Ta)
- Rds On ( Max) @ Id, Vgs:3Ohm @ 10mA, 4V
- Vgs(th) ( Max) @ Id:1.1V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:9.3 pF @ 3 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4V
- Vgs ( Max):±10V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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