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Toshiba Semiconductor and Storage SSM3K106TU(TE85L)
MOSFET N-CH 20V 1.2A UFM
Manufacturer # :SSM3K106TU(TE85L)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3K106TU(TE85L)-DS
Datasheet :
SSM3K106TU(TE85L) Datasheet
SSM3K106TU(TE85L) DatasheetCustomer # :
Description : MOSFET N-CH 20V 1.2A UFM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.4649 | $ 4.65 |
| 3000+ | $ 0.3099 | $ 929.7 |
| 6000+ | $ 0.2941 | $ 1764.6 |
| 9000+ | $ 0.2731 | $ 2457.9 |
| 30000+ | $ 0.2668 | $ 8004 |
In Stock: 89
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.4649
Total :$ 0.46
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SSM3K106TU(TE85L) information
Toshiba Semiconductor and Storage SSM3K106TU(TE85L) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFM
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:1.2A (Ta)
- Rds On ( Max) @ Id, Vgs:310mOhm @ 600mA, 10V
- Vgs(th) ( Max) @ Id:2.3V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:36 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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