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Toshiba Semiconductor and Storage SSM3J356R,LXHF
AECQ MOSFET PCH -60V -2A SOT23F
Manufacturer # :SSM3J356R,LXHF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3J356R,LXHF-DS
Datasheet :
SSM3J356R,LXHF Datasheet
SSM3J356R,LXHF DatasheetCustomer # :
Description : AECQ MOSFET PCH -60V -2A SOT23F
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9000 | $ 0.9 |
| 10+ | $ 0.7060 | $ 7.06 |
| 100+ | $ 0.3920 | $ 39.2 |
| 1000+ | $ 0.2680 | $ 268 |
| 3000+ | $ 0.2340 | $ 702 |
In Stock: 1510
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9
Total :$ 0.90
Delivery :
Payment :
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SSM3J356R,LXHF information
Toshiba Semiconductor and Storage SSM3J356R,LXHF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:SOT-23-3 Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23F
- Power Dissipation ( Max):1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Ta)
- Rds On ( Max) @ Id, Vgs:300mOhm @ 1A, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:8.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:330 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):+10V, -20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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