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Toshiba Semiconductor and Storage SSM3J327R,LF
MOSFET P-CH 20V 3.9A SOT23F
Manufacturer # :SSM3J327R,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3J327R,LF-DS
Datasheet :
SSM3J327R,LF Datasheet
SSM3J327R,LF DatasheetCustomer # :
Description : MOSFET P-CH 20V 3.9A SOT23F
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.0924 | $ 0.92 |
| 3000+ | $ 0.0616 | $ 184.8 |
| 6000+ | $ 0.0589 | $ 353.4 |
| 9000+ | $ 0.0509 | $ 458.1 |
| 30000+ | $ 0.0500 | $ 1500 |
In Stock: 55256
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0924
Total :$ 0.09
Delivery :
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SSM3J327R,LF information
Toshiba Semiconductor and Storage SSM3J327R,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-23-3 Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23F
- Power Dissipation ( Max):1W (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:3.9A (Ta)
- Rds On ( Max) @ Id, Vgs:93mOhm @ 1.5A, 4.5V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:4.6 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:290 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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