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Toshiba Semiconductor and Storage SSM3J112TU,LF
MOSFET P-CH 30V 1.1A UFM
Manufacturer # :SSM3J112TU,LF
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3J112TU,LF-DS
Datasheet :
SSM3J112TU,LF Datasheet
SSM3J112TU,LF DatasheetCustomer # :
Description : MOSFET P-CH 30V 1.1A UFM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9000 | $ 0.9 |
| 10+ | $ 0.5520 | $ 5.52 |
| 100+ | $ 0.3490 | $ 34.9 |
| 500+ | $ 0.2612 | $ 130.6 |
| 1000+ | $ 0.2328 | $ 232.8 |
In Stock: 803
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9
Total :$ 0.90
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SSM3J112TU,LF information
Toshiba Semiconductor and Storage SSM3J112TU,LF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:150°C
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFM
- Power Dissipation ( Max):800mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:1.1A (Ta)
- Rds On ( Max) @ Id, Vgs:390mOhm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:1.8V @ 100µA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:86 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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