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Toshiba Semiconductor and Storage SSM3J108TU(TE85L)
MOSFET P-CH 20V 1.8A UFM
Manufacturer # :SSM3J108TU(TE85L)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :SSM3J108TU(TE85L)-DS
Datasheet :
SSM3J108TU(TE85L) Datasheet
SSM3J108TU(TE85L) DatasheetCustomer # :
Description : MOSFET P-CH 20V 1.8A UFM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.4872 | $ 4.87 |
| 3000+ | $ 0.3248 | $ 974.4 |
| 6000+ | $ 0.3083 | $ 1849.8 |
| 9000+ | $ 0.2862 | $ 2575.8 |
| 30000+ | $ 0.2796 | $ 8388 |
In Stock: 83
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.4872
Total :$ 0.49
Delivery :
Payment :
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SSM3J108TU(TE85L) information
Toshiba Semiconductor and Storage SSM3J108TU(TE85L) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:3-SMD, Flat Leads
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:UFM
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:1.8A (Ta)
- Rds On ( Max) @ Id, Vgs:158mOhm @ 800mA, 4V
- Vgs(th) ( Max) @ Id:1V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:250 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):1.8V, 4V
- Vgs ( Max):±8V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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