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Toshiba Semiconductor and Storage MT3S111P(TE12L,F)

In Stock: 858
MOQ: 1
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Toshiba Semiconductor and Storage MT3S111P(TE12L,F) technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - RF
Product Status:Active
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Power - Max:1W
Supplier Device Package:PW-MINI
Transistor Type:NPN
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):6V
D C Current Gain (h F E) ( Min) @ Ic, Vce:200 @ 30mA, 5V
Frequency - Transition:8GHz
Noise Figure (d B Typ @ f):1.25dB @ 1GHz
Gain:10.5dB
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
MT3S111P(TE12L,F) provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

Good Experience

Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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