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Toshiba Semiconductor and Storage HN2C01FEYTE85LF

In Stock: 7920
MOQ: 1
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Toshiba Semiconductor and Storage HN2C01FEYTE85LF technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Obsolete
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Power - Max:100mW
Supplier Device Package:ES6
Transistor Type:2 NPN (Dual)
Current - Collector ( Ic) ( Max):150mA
Voltage - Collector Emitter Breakdown ( Max):50V
Vce Saturation ( Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff ( Max):100nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:120 @ 2mA, 6V
Frequency - Transition:60MHz
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.21.0095
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
HN2C01FEYTE85LF provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.

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Ratings and Reviews
Great Product

John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

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Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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