![](https://assets.dasenic.com/product/other/HN1D01FETE85LF.png)
Images are for reference only.
1 : $0.4500
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
Toshiba HN1B04FE-GR,LXHF
AUTO AEC-Q PNP + NPN TR VCEO:-50![part number has RoHS](/img/RoHS2.png)
Manufacturer # :HN1B04FE-GR,LXHF
Manufacturer :Toshiba
Dasenic # :E284B3-DS
Datasheet :
HN1B04FE-GR,LXHF Datasheet
![pdf download](/img/pdf.png)
Sample :
Customer # :
Description : AUTO AEC-Q PNP + NPN TR VCEO:-50 SOT-563, SOT-666
Pricing (USD) : *To apply for a price, please click the Send Target Price button
Quantity | Unit Price | Total |
1+ | $ 0.450000 | $ 0.45 |
10+ | $ 0.356400 | $ 3.56 |
100+ | $ 0.238500 | $ 23.85 |
500+ | $ 0.184500 | $ 92.25 |
1000+ | $ 0.141300 | $ 141.3 |
In Stock: 9326
MOQ :1 PCS
Packaging :SOT-563, SOT-666
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.45
Total :$ 0.45
Delivery : ![dhl](/img/dhl.png)
![ups](/img/ups.png)
![fedex](/img/fedex.png)
![dhl](/img/dhl.png)
![ups](/img/ups.png)
![fedex](/img/fedex.png)
Payment :![paypal](/img/paypal.webp)
![stripe](/img/stripe.png)
![wiretransfer](/img/wiretransfer.png)
![paypal02](/img/paypal02.webp)
![paypal04](/img/paypal04.webp)
![paypal](/img/paypal.webp)
![stripe](/img/stripe.png)
![wiretransfer](/img/wiretransfer.png)
![paypal02](/img/paypal02.webp)
![paypal04](/img/paypal04.webp)
Help you to save your cost and time.
Strict quality inspection and Reliable package for goods.
Fast Reliable delivery to save time.
Provide 365 days warranty after-sales service
- Category:Discrete Semiconductor Devices/Pre-biased Bipolar Transistor Arrays
- Product Status:Active
- Operating Temperature:150°C (TJ)
- Package / Case:SOT-563, SOT-666
- Power - Max:100mW
- Supplier Device Package:ES6
- Transistor Type:NPN, PNP
- Current - Collector ( Ic) ( Max):150mA
- Voltage - Collector Emitter Breakdown ( Max):50V
- Vce Saturation ( Max) @ Ib, Ic:250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Current - Collector Cutoff ( Max):100nA (ICBO)
- D C Current Gain (h F E) ( Min) @ Ic, Vce:200 @ 2mA, 6V
- Frequency - Transition:80MHz