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Toshiba Semiconductor and Storage GT30N135SRA,S1E
Manufacturer # :GT30N135SRA,S1E
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :GT30N135SRA,S1E-DS
Datasheet : GT30N135SRA,S1E Datasheet
Customer # :
Description : D-IGBT TO-247 VCES=1350V IC=30A
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In Stock: 11112
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.401
Total :$ 4.40
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GT30N135SRA,S1E information
Toshiba Semiconductor and Storage GT30N135SRA,S1E technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
- Product Status:Active
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Input Type:Standard
- Power - Max:348 W
- Supplier Device Package:TO-247
- Reverse Recovery Time (trr):-
- Current - Collector ( Ic) ( Max):60 A
- Voltage - Collector Emitter Breakdown ( Max):1350 V
- I G B T Type:-
- Vce(on) ( Max) @ Vge, Ic:2.6V @ 15V, 60A
- Current - Collector Pulsed ( Icm):120 A
- Switching Energy:-, 1.3mJ (off)
- Gate Charge:270 nC
- Td (on/off) @ 25° C:-
- Test Condition:300V, 60A, 39Ohm, 15V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GT30N135SRA,S1E provided by Toshiba Semiconductor and Storage
Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.
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