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Toshiba Semiconductor and Storage CUHS20S30,H3F
Manufacturer # :CUHS20S30,H3F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :CUHS20S30,H3F-DS
Datasheet : CUHS20S30,H3F Datasheet
Customer # :
Description : SCHOTTKY BARRIER DIODE, LOW VF,
Pricing (USD) : *To apply for a price, please click the Send Target Price button
In Stock: 30803
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.324
Total :$ 0.32
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CUHS20S30,H3F information
Toshiba Semiconductor and Storage CUHS20S30,H3F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:2-SMD, Flat Lead
- Supplier Device Package:US2H
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Current - Average Rectified ( Io):2A
- Voltage - Forward ( Vf) ( Max) @ If:410 mV @ 2 A
- Current - Reverse Leakage @ Vr:500 µA @ 30 V
- Capacitance @ Vr, F:390pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):30 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:150°C (Max)
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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