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Toshiba Semiconductor and Storage CUHS20S30,H3F

SCHOTTKY BARRIER DIODE, LOW VF,
part number has RoHS
Manufacturer # :CUHS20S30,H3F
Dasenic # :CUHS20S30,H3F-DS
Customer # :
Description : SCHOTTKY BARRIER DIODE, LOW VF,
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 0.3240$ 0.32
10+$ 0.2178$ 2.18
100+$ 0.1476$ 14.76
500+$ 0.1143$ 57.15
1000+$ 0.1035$ 103.5
In Stock: 30803
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.324
Total :$ 0.32
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CUHS20S30,H3F information

  • Toshiba Semiconductor and Storage CUHS20S30,H3F technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
  • Product Status:Active
  • Mounting Type:Surface Mount
  • Package / Case:2-SMD, Flat Lead
  • Supplier Device Package:US2H
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type:Schottky
  • Current - Average Rectified ( Io):2A
  • Voltage - Forward ( Vf) ( Max) @ If:410 mV @ 2 A
  • Current - Reverse Leakage @ Vr:500 µA @ 30 V
  • Capacitance @ Vr, F:390pF @ 0V, 1MHz
  • Voltage - D C Reverse ( Vr) ( Max):30 V
  • Reverse Recovery Time (trr):-
  • Operating Temperature - Junction:150°C (Max)
  • EU RoHS Status:ROHS3 Compliant
  • MSL Rating:1 (Unlimited, 30°C/85%RH)
  • US ECCN:EAR99
  • HTS US:8541.10.0080
  • REACH Status:REACH is not affected
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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