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1 : $0.3240
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Toshiba Semiconductor and Storage CRH02(TE85L,Q,M)
DIODE GEN PURP 200V 500MA S-FLAT
Manufacturer # :CRH02(TE85L,Q,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :CRH02(TE85L,Q,M)-DS
Datasheet :
CRH02(TE85L,Q,M) Datasheet
CRH02(TE85L,Q,M) DatasheetCustomer # :
Description : DIODE GEN PURP 200V 500MA S-FLAT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3240 | $ 0.32 |
| 10+ | $ 0.2151 | $ 2.15 |
| 100+ | $ 0.1449 | $ 14.49 |
| 500+ | $ 0.1125 | $ 56.25 |
| 1000+ | $ 0.1017 | $ 101.7 |
In Stock: 25200
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.324
Total :$ 0.32
Delivery :
Payment :
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CRH02(TE85L,Q,M) information
Toshiba Semiconductor and Storage CRH02(TE85L,Q,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:SOD-123F
- Supplier Device Package:S-FLAT (1.6x3.5)
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):500mA
- Voltage - Forward ( Vf) ( Max) @ If:950 mV @ 500 mA
- Current - Reverse Leakage @ Vr:10 µA @ 200 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):200 V
- Reverse Recovery Time (trr):35 ns
- Operating Temperature - Junction:150°C (Max)
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0070
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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