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Toshiba Semiconductor and Storage CRG09(TE85L,Q,M)
DIODE GEN PURP 400V 1A S-FLAT
Manufacturer # :CRG09(TE85L,Q,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :CRG09(TE85L,Q,M)-DS
Datasheet :
CRG09(TE85L,Q,M) Datasheet
CRG09(TE85L,Q,M) DatasheetCustomer # :
Description : DIODE GEN PURP 400V 1A S-FLAT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 3+ | $ 0.1012 | $ 0.3 |
In Stock: 1503
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.1012
Total :$ 0.10
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CRG09(TE85L,Q,M) information
Toshiba Semiconductor and Storage CRG09(TE85L,Q,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:SOD-123F
- Supplier Device Package:S-FLAT (1.6x3.5)
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):1A
- Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 700 mA
- Current - Reverse Leakage @ Vr:10 µA @ 400 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):400 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-40°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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