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Toshiba Semiconductor and Storage CRG03(TE85L,Q,M)
DIODE GEN PURP 400V 1A SFLAT
Manufacturer # :CRG03(TE85L,Q,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :CRG03(TE85L,Q,M)-DS
Datasheet :
CRG03(TE85L,Q,M) Datasheet
CRG03(TE85L,Q,M) DatasheetCustomer # :
Description : DIODE GEN PURP 400V 1A SFLAT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2405 | $ 2.41 |
| 3000+ | $ 0.1603 | $ 480.9 |
| 6000+ | $ 0.1532 | $ 919.2 |
| 9000+ | $ 0.1325 | $ 1192.5 |
| 30000+ | $ 0.1300 | $ 3900 |
In Stock: 77
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2405
Total :$ 0.24
Delivery :
Payment :
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CRG03(TE85L,Q,M) information
Toshiba Semiconductor and Storage CRG03(TE85L,Q,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:SOD-123F
- Supplier Device Package:S-FLAT (1.6x3.5)
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):1A
- Voltage - Forward ( Vf) ( Max) @ If:1 V @ 1 A
- Current - Reverse Leakage @ Vr:10 µA @ 400 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):400 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-40°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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