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Toshiba Semiconductor and Storage CMF05(TE12L,Q,M)
DIODE GEN PURP 1KV 500MA MFLAT
Manufacturer # :CMF05(TE12L,Q,M)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :CMF05(TE12L,Q,M)-DS
Datasheet :
CMF05(TE12L,Q,M) Datasheet
CMF05(TE12L,Q,M) DatasheetCustomer # :
Description : DIODE GEN PURP 1KV 500MA MFLAT
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 0.2131 | $ 2.13 |
| 3000+ | $ 0.1184 | $ 355.2 |
| 6000+ | $ 0.1091 | $ 654.6 |
| 9000+ | $ 0.1184 | $ 1065.6 |
| 15000+ | $ 0.0990 | $ 1485 |
In Stock: 14777
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.2131
Total :$ 0.21
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CMF05(TE12L,Q,M) information
Toshiba Semiconductor and Storage CMF05(TE12L,Q,M) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:SOD-128
- Supplier Device Package:M-FLAT (2.4x3.8)
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):500mA
- Voltage - Forward ( Vf) ( Max) @ If:2.7 V @ 500 mA
- Current - Reverse Leakage @ Vr:50 µA @ 800 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):1000 V
- Reverse Recovery Time (trr):100 ns
- Operating Temperature - Junction:-40°C ~ 125°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:4 (72 Hours)
- US ECCN:EAR99
- HTS US:8541.10.0070
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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