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Toshiba Semiconductor and Storage BAS316,H3F
DIODE GEN PURP 100V 250MA USC
Manufacturer # :BAS316,H3F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :BAS316,H3F-DS
Datasheet :
BAS316,H3F Datasheet
BAS316,H3F DatasheetCustomer # :
Description : DIODE GEN PURP 100V 250MA USC
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| Quantity | Unit Price | Total |
| 1+ | $ 0.0900 | $ 0.09 |
| 10+ | $ 0.0621 | $ 0.62 |
| 100+ | $ 0.0585 | $ 5.85 |
| 1000+ | $ 0.0288 | $ 28.8 |
| 3000+ | $ 0.0234 | $ 70.2 |
In Stock: 12540
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0.09
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BAS316,H3F information
Toshiba Semiconductor and Storage BAS316,H3F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:SC-76, SOD-323
- Supplier Device Package:USC
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Average Rectified ( Io):250mA
- Voltage - Forward ( Vf) ( Max) @ If:1.25 V @ 150 mA
- Current - Reverse Leakage @ Vr:200 nA @ 80 V
- Capacitance @ Vr, F:0.35pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):100 V
- Reverse Recovery Time (trr):3 ns
- Operating Temperature - Junction:150°C (Max)
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0070
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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