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Toshiba Semiconductor and Storage 6N138F
OPTOISO 2.5KV DARL W/BASE 8DIP
Manufacturer # :6N138F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :6N138F-DS
Datasheet :
6N138F Datasheet
6N138F DatasheetCustomer # :
Description : OPTOISO 2.5KV DARL W/BASE 8DIP
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| Quantity | Unit Price | Total |
In Stock: 43
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0
Total :$ 0.00
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6N138F information
Toshiba Semiconductor and Storage 6N138F technical specifications, attributes, parameters.
- Category:Isolators/Optoisolators - Transistor, Photovoltaic Output
- Product Status:Obsolete
- Operating Temperature:0°C ~ 70°C
- Mounting Type:Through Hole
- Package / Case:8-DIP (0.300", 7.62mm)
- Input Type:DC
- Output Type:Darlington with Base
- Number of Channels:1
- Supplier Device Package:8-DIP
- Current - Output / Channel:60mA
- Voltage - Isolation:2500Vrms
- Rise / Fall Time ( Typ):-
- Voltage - Output ( Max):18V
- Voltage - Forward ( Vf) ( Typ):1.65V
- Current - D C Forward ( If) ( Max):20 mA
- Current Transfer Ratio ( Min):300% @ 1.6mA
- Current Transfer Ratio ( Max):-
- Turn On / Turn Off Time ( Typ):1µs, 4µs
- Vce Saturation ( Max):-
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.49.8000
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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