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Toshiba Semiconductor and Storage 2SK3127(TE24L,Q)
MOSFET N-CH 30V 45A TO220SM
Manufacturer # :2SK3127(TE24L,Q)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :2SK3127(TE24L,Q)-DS
Datasheet :
2SK3127(TE24L,Q) Datasheet
2SK3127(TE24L,Q) DatasheetCustomer # :
Description : MOSFET N-CH 30V 45A TO220SM
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 3.8405 | $ 38.41 |
| 3000+ | $ 2.5603 | $ 7680.9 |
| 6000+ | $ 2.4641 | $ 14784.6 |
In Stock: 37
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.8405
Total :$ 3.84
Delivery :
Payment :
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2SK3127(TE24L,Q) information
Toshiba Semiconductor and Storage 2SK3127(TE24L,Q) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220SM
- Power Dissipation ( Max):65W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:45A (Ta)
- Rds On ( Max) @ Id, Vgs:12mOhm @ 25A, 10V
- Vgs(th) ( Max) @ Id:3V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:66 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:2300 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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