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Toshiba Semiconductor and Storage 2SK2963(TE12L,F)
MOSFET N-CH 100V 1A PW-MINI
Manufacturer # :2SK2963(TE12L,F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :2SK2963(TE12L,F)-DS
Datasheet :
2SK2963(TE12L,F) Datasheet
2SK2963(TE12L,F) DatasheetCustomer # :
Description : MOSFET N-CH 100V 1A PW-MINI
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 1.0472 | $ 10.47 |
| 1000+ | $ 0.6981 | $ 698.1 |
| 2000+ | $ 0.6218 | $ 1243.6 |
| 5000+ | $ 0.5890 | $ 2945 |
| 10000+ | $ 0.5454 | $ 5454 |
In Stock: 85
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.0472
Total :$ 1.05
Delivery :
Payment :
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2SK2963(TE12L,F) information
Toshiba Semiconductor and Storage 2SK2963(TE12L,F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-243AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PW-MINI
- Power Dissipation ( Max):500mW (Ta)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:1A (Ta)
- Rds On ( Max) @ Id, Vgs:700mOhm @ 500mA, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:6.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:140 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.21.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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