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Toshiba Semiconductor and Storage 2SK2145-Y(TE85L,F) Environmental and export classification status description

Toshiba 2SK2145-Y(TE85L,F) is a power MOSFET transistor designed for high-frequency and high-speed switching applications. It belongs to the Discrete Semiconductor Devices category and is commonly used in power supply circuits, motor control, and other electronic devices requiring efficient power management. Functions: 1. High-speed switching capabilities 2. Low on-state resistance for improved efficiency 3. High forward transfer admittance for low input capacitance 4. Low gate charge for fast switching speed Applications: 1. Power supply circuits 2. Motor control systems 3. Inverters and converters 4. Amplifiers Alternative Components: 1. Infineon IRF640NPBF 2. ON Semiconductor NTD4809NT4G 3. STMicroelectronics STP7NB80FP Embedded Modules: 1. Toshiba TMPM440F10XBG 2. Renesas RX651 Related Q&A: 1. Q: What is the maximum voltage and current rating for the Toshiba 2SK2145-Y(TE85L,F)? A: The maximum voltage is typically around 400V, and the current rating can be up to 10A. 2. Q: What are the typical on-state resistance values for this MOSFET? A: The on-state resistance typically ranges from 0.5 to 1.5 ohms, depending on the specific operating conditions. 3. Q: Can the Toshiba 2SK2145-Y(TE85L,F) be used in audio amplifiers? A: Yes, this MOSFET can be used in audio amplifiers due to its high-speed switching capabilities and low on-state resistance. 4. Q: How does the gate charge of the 2SK2145-Y(TE85L,F) affect switching speed? A: A lower gate charge results in faster switching speed, reducing power losses and improving efficiency in high-frequency applications. 5. Q: Are there any particular heat dissipation requirements for the 2SK2145-Y(TE85L,F)? A: It is advisable to provide sufficient heat sinking to dissipate the heat generated during operation, especially in high-power applications to prevent overheating and ensure reliability.