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Toshiba Semiconductor and Storage 2SJ380(F)
MOSFET P-CH 100V 12A TO220NIS
Manufacturer # :2SJ380(F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :2SJ380(F)-DS
Datasheet :
2SJ380(F) Datasheet
2SJ380(F) DatasheetCustomer # :
Description : MOSFET P-CH 100V 12A TO220NIS
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| Quantity | Unit Price | Total |
| 50+ | $ 3.0220 | $ 151.1 |
In Stock: 2166
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.022
Total :$ 3.02
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2SJ380(F) information
Toshiba Semiconductor and Storage 2SJ380(F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220NIS
- Power Dissipation ( Max):35W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:12A (Ta)
- Rds On ( Max) @ Id, Vgs:210mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:2V @ 1mA
- Gate Charge ( Qg) ( Max) @ Vgs:48 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1100 pF @ 10 V
- Drive Voltage ( Max Rds On, Min Rds On):4V, 10V
- Vgs ( Max):±20V
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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