Toshiba Semiconductor and Storage 2SC2714-O(TE85L,F) technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - RF
Product Status:Active
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:100mW
Supplier Device Package:S-Mini
Transistor Type:NPN
Current - Collector ( Ic) ( Max):20mA
Voltage - Collector Emitter Breakdown ( Max):30V
D C Current Gain (h F E) ( Min) @ Ic, Vce:70 @ 1mA, 6V
Frequency - Transition:550MHz
Noise Figure (d B Typ @ f):2.5dB @ 100MHz
Gain:23dB
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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2SC2714-O(TE85L,F) Datasheet
