Name: 1SV325,H3F
Brand: Toshiba Semiconductor and Storage
SKU: DS-5877403
Price: 0.306 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $0.3060

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Toshiba Semiconductor and Storage 1SV325,H3F

DIODE VARACTOR 10V ESC

Manufacturer # :1SV325,H3F

Manufacturer :Toshiba Semiconductor and Storage

Dasenic # :1SV325,H3F-DS

Datasheet :

1SV325,H3F Datasheet

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Description : DIODE VARACTOR 10V ESC

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Quantity	Unit Price	Total
1+	$ 0.3060	$ 0.31
10+	$ 0.1944	$ 1.94
100+	$ 0.0963	$ 9.63
1000+	$ 0.0738	$ 73.8
4000+	$ 0.0666	$ 266.4

In Stock: 22500

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.306

Total :$ 0.31

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1SV325,H3F information

Toshiba Semiconductor and Storage 1SV325,H3F technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Variable Capacitance (Varicaps, Varactors)
Product Status:Active
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:ESC
Diode Type:Single
Voltage - Peak Reverse ( Max):10 V
Capacitance @ Vr, F:12pF @ 4V, 1MHz
Capacitance Ratio:4.3
Capacitance Ratio Condition:C1/C4
Q @ Vr, F:-
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage 1SV325,H3F
Datasheet:
1SV325,H3F,

Toshiba Semiconductor and Storage 1SV325,H3F Environmental and export classification status description
Toshiba 1SV325,H3F is a Schottky Barrier Diode featuring low reverse current and high-speed switching capabilities. It is designed for high-frequency applications. Functions: 1. Schottky Barrier Diode 2. Low reverse current 3. High-speed switching Applications: 1. High-frequency rectification 2. Voltage clamping 3. Precision signal processing Alternative Components: 1. 1N5819 Schottky Diode 2. BAT54 Schottky Diode 3. SB160 Schottky Diode Embedded Modules: Toshiba 1SV325,H3F can be integrated into various circuits and modules for high-frequency signal processing, voltage regulation, and switching applications. Q&A: 1. Q: What is the typical forward voltage drop of Toshiba 1SV325,H3F? A: The typical forward voltage drop of Toshiba 1SV325,H3F is around 0.45 volts. 2. Q: What is the maximum reverse voltage rating of Toshiba 1SV325,H3F? A: The maximum reverse voltage rating of Toshiba 1SV325,H3F is typically 20 volts. 3. Q: Can Toshiba 1SV325,H3F be used for audio signal processing? A: While primarily designed for high-frequency applications, Toshiba 1SV325,H3F can also be utilized for audio signal processing due to its high-speed switching capability. 4. Q: How does Toshiba 1SV325,H3F compare to other Schottky Barrier Diodes in terms of speed? A: Toshiba 1SV325,H3F offers high-speed switching performance, making it suitable for applications requiring rapid signal processing compared to standard rectifier diodes. 5. Q: What are the typical packaging options available for Toshiba 1SV325,H3F? A: Toshiba 1SV325,H3F is commonly available in surface-mount packages such as SOD-523 and SOD-882 for easy integration into various circuit designs.

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1SV325,H3F provided by Toshiba Semiconductor and Storage

Toshiba America Electronic Components, Inc. (TAEC) is the North America electronic components business of Toshiba. TAEC offers a broad IC and discrete product line including high-end microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including Enterprise and Consumer HDDs.TAEC was established in 1989, providing design, manufacturing, marketing and sales, with offices in United States and Latin America.