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Toshiba Semiconductor and Storage 1SS389,H3F
DIODE SCHOTTKY 40V 100MA ESC
Manufacturer # :1SS389,H3F
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :1SS389,H3F-DS
Datasheet :
1SS389,H3F Datasheet
1SS389,H3F DatasheetCustomer # :
Description : DIODE SCHOTTKY 40V 100MA ESC
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5800 | $ 0.58 |
In Stock: 2684
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.58
Total :$ 0.58
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1SS389,H3F information
Toshiba Semiconductor and Storage 1SS389,H3F technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:SC-79, SOD-523
- Supplier Device Package:ESC
- Speed:Small Signal =< 200mA (Io), Any Speed
- Diode Type:Schottky
- Current - Average Rectified ( Io):100mA
- Voltage - Forward ( Vf) ( Max) @ If:600 mV @ 50 mA
- Current - Reverse Leakage @ Vr:5 µA @ 10 V
- Capacitance @ Vr, F:25pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):40 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:125°C (Max)
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0070
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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