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Toshiba Semiconductor and Storage 1SS307(TE85L,F)
DIODE GEN PURP 30V 100MA SMINI
Manufacturer # :1SS307(TE85L,F)
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :1SS307(TE85L,F)-DS
Datasheet :
1SS307(TE85L,F) Datasheet
1SS307(TE85L,F) DatasheetCustomer # :
Description : DIODE GEN PURP 30V 100MA SMINI
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3240 | $ 0.32 |
| 10+ | $ 0.2178 | $ 2.18 |
| 100+ | $ 0.1476 | $ 14.76 |
| 500+ | $ 0.1143 | $ 57.15 |
| 1000+ | $ 0.1035 | $ 103.5 |
In Stock: 9592
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.324
Total :$ 0.32
Delivery :
Payment :
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1SS307(TE85L,F) information
Toshiba Semiconductor and Storage 1SS307(TE85L,F) technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:S-Mini
- Speed:Small Signal =< 200mA (Io), Any Speed
- Diode Type:Standard
- Current - Average Rectified ( Io):100mA
- Voltage - Forward ( Vf) ( Max) @ If:1.3 V @ 100 mA
- Current - Reverse Leakage @ Vr:10 µA @ 30 V
- Capacitance @ Vr, F:6pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):30 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:125°C (Max)
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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