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Toshiba Semiconductor and Storage 1SS193S,LF(D
DIODE GEN PURP 80V 100MA SMINI
Manufacturer # :1SS193S,LF(D
Manufacturer :Toshiba Semiconductor and Storage
Dasenic # :1SS193S,LF(D-DS
Datasheet :
1SS193S,LF(D Datasheet
1SS193S,LF(D DatasheetCustomer # :
Description : DIODE GEN PURP 80V 100MA SMINI
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| Quantity | Unit Price | Total |
| 1+ | $ 0.1312 | $ 0.13 |
| 25+ | $ 0.1286 | $ 3.22 |
| 100+ | $ 0.1234 | $ 12.34 |
| 500+ | $ 0.1181 | $ 59.05 |
| 1000+ | $ 0.1115 | $ 111.5 |
In Stock: 25200
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0.1312
Total :$ 0.13
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1SS193S,LF(D information
Toshiba Semiconductor and Storage 1SS193S,LF(D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Supplier Device Package:S-Mini
- Speed:Small Signal =< 200mA (Io), Any Speed
- Diode Type:Standard
- Current - Average Rectified ( Io):100mA
- Voltage - Forward ( Vf) ( Max) @ If:1.2 V @ 100 mA
- Current - Reverse Leakage @ Vr:500 nA @ 80 V
- Capacitance @ Vr, F:3pF @ 0V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):80 V
- Reverse Recovery Time (trr):4 ns
- Operating Temperature - Junction:125°C (Max)
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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