Texas Instruments CSD87333Q3DT technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Power - Max:6W
Supplier Device Package:8-VSON (3.3x3.3)
F E T Type:2 N-Channel (Dual) Asymmetrical
F E T Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage ( Vdss):30V
Current - Continuous Drain ( Id) @ 25° C:15A
Rds On ( Max) @ Id, Vgs:14.3mOhm @ 4A, 8V
Vgs(th) ( Max) @ Id:1.2V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:4.6nC @ 4.5V
Input Capacitance ( Ciss) ( Max) @ Vds:662pF @ 15V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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CSD87333Q3DT Datasheet
