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CSD87312Q3E
30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm
Dasenic Part Number : 6EDAE3-DS
Manufacturer :Texas Instruments
Manufacturer Part # : CSD87312Q3E
Datasheet :
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Pricing (USD) : Prices are for reference only and aren't final sales prices.
| Quantity | Unit Price | Total |
| 1+ | $ 0.435300 | $ 0.44 |
| 10+ | $ 0.344400 | $ 3.44 |
| 100+ | $ 0.188700 | $ 18.87 |
| 1000+ | $ 0.001500 | $ 1.5 |
In Stock: 42724
MOQ : 1 PCS
Packaging :8-PowerTDFN
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.4353
Total : $ 0.44
* Tax not included , All prices are in USD
Delivery : 
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Five-star service - Category:Discrete Semiconductor Devices/FETs, MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Package / Case:8-PowerTDFN
- Power - Max:2.5W
- Supplier Device Package:8-VSON (3.3x3.3)
- F E T Type:2 N-Channel (Dual) Common Source
- F E T Feature:Logic Level Gate
- Drain to Source Voltage ( Vdss):30V
- Current - Continuous Drain ( Id) @ 25° C:27A
- Rds On ( Max) @ Id, Vgs:33mOhm @ 7A , 8V
- Vgs(th) ( Max) @ Id:1.3V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:8.2nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:1250pF @ 15V
