Texas Instruments CSD17308Q3 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Power Dissipation ( Max):2.7W (Ta)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):30 V
Current - Continuous Drain ( Id) @ 25° C:14A (Ta), 44A (Tc)
Rds On ( Max) @ Id, Vgs:10.3mOhm @ 10A, 8V
Vgs(th) ( Max) @ Id:1.8V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:5.1 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:700 pF @ 15 V
Drive Voltage ( Max Rds On, Min Rds On):3V, 8V
Vgs ( Max):+10V, -8V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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CSD17308Q3 Datasheet
