Texas Instruments CSD13302W technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:4-UFBGA, DSBGA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-DSBGA (1x1)
Power Dissipation ( Max):1.8W (Ta)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):12 V
Current - Continuous Drain ( Id) @ 25° C:1.6A (Ta)
Rds On ( Max) @ Id, Vgs:17.1mOhm @ 1A, 4.5V
Vgs(th) ( Max) @ Id:1.3V @ 250µA
Gate Charge ( Qg) ( Max) @ Vgs:7.8 nC @ 4.5 V
Input Capacitance ( Ciss) ( Max) @ Vds:862 pF @ 6 V
Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
Vgs ( Max):±10V
EU RoHS Status:RoHS Compliant
REACH Status:REACH is not affected
US ECCN:EAR99
China RoHS Status:Green Symbol: Green and environmentally friendly product
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CSD13302W Datasheet
