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Taiwan Semiconductor TSM900N06CW RPG
MOSFET N-CHANNEL 60V 11A SOT223
Manufacturer # :TSM900N06CW RPG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM900N06CW RPG-DS
Datasheet :
TSM900N06CW RPG Datasheet
TSM900N06CW RPG DatasheetCustomer # :
Description : MOSFET N-CHANNEL 60V 11A SOT223
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.3870 | $ 0.39 |
| 10+ | $ 0.3276 | $ 3.28 |
| 100+ | $ 0.2286 | $ 22.86 |
| 500+ | $ 0.1782 | $ 89.1 |
| 1000+ | $ 0.1449 | $ 144.9 |
In Stock: 15000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.387
Total :$ 0.39
Delivery :
Payment :
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TSM900N06CW RPG information
Taiwan Semiconductor TSM900N06CW RPG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-261-4, TO-261AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-223
- Power Dissipation ( Max):4.17W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:11A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.3 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:500 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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