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Taiwan Semiconductor TSM80N1R2CP ROG
MOSFET N-CH 800V 5.5A TO252
Manufacturer # :TSM80N1R2CP ROG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM80N1R2CP ROG-DS
Datasheet :
TSM80N1R2CP ROG Datasheet
TSM80N1R2CP ROG DatasheetCustomer # :
Description : MOSFET N-CH 800V 5.5A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 5.9400 | $ 5.94 |
| 5+ | $ 5.3600 | $ 26.8 |
| 25+ | $ 4.7400 | $ 118.5 |
| 100+ | $ 4.2600 | $ 426 |
| 1000+ | $ 4.0600 | $ 4060 |
In Stock: 905
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.94
Total :$ 5.94
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TSM80N1R2CP ROG information
Taiwan Semiconductor TSM80N1R2CP ROG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-252, (D-Pak)
- Power Dissipation ( Max):110W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):800 V
- Current - Continuous Drain ( Id) @ 25° C:5.5A (Tc)
- Rds On ( Max) @ Id, Vgs:1.2Ohm @ 2.75A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:19.4 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:685 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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