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Taiwan Semiconductor TSM7ND65CI
MOSFET N-CH 650V 7A ITO220
Manufacturer # :TSM7ND65CI
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM7ND65CI-DS
Datasheet :
TSM7ND65CI Datasheet
TSM7ND65CI DatasheetCustomer # :
Description : MOSFET N-CH 650V 7A ITO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 7.2800 | $ 7.28 |
| 50+ | $ 4.0148 | $ 200.74 |
| 100+ | $ 7.2800 | $ 728 |
| 500+ | $ 3.0882 | $ 1544.1 |
| 1000+ | $ 3.0310 | $ 3031 |
In Stock: 1501
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 7.28
Total :$ 7.28
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Payment :
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TSM7ND65CI information
Taiwan Semiconductor TSM7ND65CI technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack, Isolated Tab
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ITO-220
- Power Dissipation ( Max):50W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:7A (Tc)
- Rds On ( Max) @ Id, Vgs:1.35Ohm @ 1.8A, 10V
- Vgs(th) ( Max) @ Id:3.8V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:25 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1124 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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