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Taiwan Semiconductor TSM7NC65CF C0G
MOSFET N-CH 650V 7A ITO220S
Manufacturer # :TSM7NC65CF C0G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM7NC65CF C0G-DS
Datasheet :
TSM7NC65CF C0G Datasheet
TSM7NC65CF C0G DatasheetCustomer # :
Description : MOSFET N-CH 650V 7A ITO220S
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.4000 | $ 2.4 |
| 5+ | $ 2.1600 | $ 10.8 |
| 25+ | $ 1.9200 | $ 48 |
| 100+ | $ 1.7200 | $ 172 |
In Stock: 2868
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.4
Total :$ 2.40
Delivery :
Payment :
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TSM7NC65CF C0G information
Taiwan Semiconductor TSM7NC65CF C0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ITO-220S
- Power Dissipation ( Max):44.6W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:7A (Tc)
- Rds On ( Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:24 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1169 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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