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Taiwan Semiconductor TSM6502CR RLG
MOSFET N/P-CH 60V 24A/18A 8PDFN
Manufacturer # :TSM6502CR RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM6502CR RLG-DS
Datasheet :
TSM6502CR RLG Datasheet
TSM6502CR RLG DatasheetCustomer # :
Description : MOSFET N/P-CH 60V 24A/18A 8PDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.9000 | $ 0.9 |
| 10+ | $ 0.7389 | $ 7.39 |
| 100+ | $ 0.5742 | $ 57.42 |
| 500+ | $ 0.4869 | $ 243.45 |
| 1000+ | $ 0.3969 | $ 396.9 |
In Stock: 9662
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.9
Total :$ 0.90
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TSM6502CR RLG information
Taiwan Semiconductor TSM6502CR RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Power - Max:40W
- Supplier Device Package:8-PDFN (5x6)
- F E T Type:N and P-Channel
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):60V
- Current - Continuous Drain ( Id) @ 25° C:24A (Tc), 18A (Tc)
- Rds On ( Max) @ Id, Vgs:34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:10.3nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:1159pF @ 30V, 930pF @ 30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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