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Taiwan Semiconductor TSM60NB190CZ C0G
MOSFET N-CHANNEL 600V 18A TO220
Manufacturer # :TSM60NB190CZ C0G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM60NB190CZ C0G-DS
Datasheet :
TSM60NB190CZ C0G Datasheet
TSM60NB190CZ C0G DatasheetCustomer # :
Description : MOSFET N-CHANNEL 600V 18A TO220
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 107+ | $ 0.8386 | $ 89.73 |
In Stock: 11574
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.8386
Total :$ 0.84
Delivery :
Payment :
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TSM60NB190CZ C0G information
Taiwan Semiconductor TSM60NB190CZ C0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-220
- Power Dissipation ( Max):33.8W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:18A (Tc)
- Rds On ( Max) @ Id, Vgs:190mOhm @ 6A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:31 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1273 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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