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Taiwan Semiconductor TSM60NB041PW C1G
MOSFET N-CHANNEL 600V 78A TO247
Manufacturer # :TSM60NB041PW C1G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM60NB041PW C1G-DS
Datasheet :
TSM60NB041PW C1G Datasheet
TSM60NB041PW C1G DatasheetCustomer # :
Description : MOSFET N-CHANNEL 600V 78A TO247
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 13.3830 | $ 13.38 |
| 25+ | $ 10.8346 | $ 270.87 |
| 100+ | $ 10.1971 | $ 1019.71 |
| 500+ | $ 9.2411 | $ 4620.55 |
| 1000+ | $ 8.4763 | $ 8476.3 |
In Stock: 7452
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 13.383
Total :$ 13.38
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Payment :
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TSM60NB041PW C1G information
Taiwan Semiconductor TSM60NB041PW C1G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-247
- Power Dissipation ( Max):446W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:78A (Tc)
- Rds On ( Max) @ Id, Vgs:41mOhm @ 21.7A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:139 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:6120 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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