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Taiwan Semiconductor TSM60N1R4CH C5G
MOSFET N-CH 600V 3.3A TO251![part number has RoHS](/img/RoHS2.png)
Manufacturer # :TSM60N1R4CH C5G
Manufacturer :Taiwan Semiconductor
Dasenic # :F03C80-DS
Datasheet :
TSM60N1R4CH C5G Datasheet
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Description : MOSFET N-CH 600V 3.3A TO251 TO-251-3 Short Leads, IPak, TO-251AA Tube
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Quantity | Unit Price | Total |
1+ | $ 2.300000 | $ 2.3 |
5+ | $ 2.060000 | $ 10.3 |
25+ | $ 1.820000 | $ 45.5 |
75+ | $ 1.640000 | $ 123 |
In Stock: 946
MOQ :1 PCS
Packaging :TO-251-3 Short Leads, IPak, TO-251AA Tube
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 2.3
Total :$ 2.30
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Not For New Designs
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-251 (IPAK)
- Power Dissipation ( Max):38W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:3.3A (Tc)
- Rds On ( Max) @ Id, Vgs:1.4Ohm @ 2A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.7 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:370 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- Base Product Number:TSM60
- Packaging:Tube