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Taiwan Semiconductor TSM600P03CS RLG
MOSFET P-CHANNEL 30V 4.7A 8SOP
Manufacturer # :TSM600P03CS RLG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM600P03CS RLG-DS
Datasheet :
TSM600P03CS RLG Datasheet
TSM600P03CS RLG DatasheetCustomer # :
Description : MOSFET P-CHANNEL 30V 4.7A 8SOP
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 201+ | $ 0.0324 | $ 6.51 |
| 250+ | $ 0.0320 | $ 8 |
| 500+ | $ 0.0255 | $ 12.75 |
| 1000+ | $ 0.0200 | $ 20 |
| 3000+ | $ 0.0166 | $ 49.8 |
In Stock: 11370
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.0324
Total :$ 0.03
Delivery :
Payment :
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TSM600P03CS RLG information
Taiwan Semiconductor TSM600P03CS RLG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SOP
- Power Dissipation ( Max):2.1W (Tc)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):30 V
- Current - Continuous Drain ( Id) @ 25° C:4.7A (Tc)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 3A, 10V
- Vgs(th) ( Max) @ Id:2.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.6 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:560 pF @ 15 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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