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Taiwan Semiconductor TSM4NC60CI C0G
MOSFET N-CH 600V 4A ITO220AB
Manufacturer # :TSM4NC60CI C0G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM4NC60CI C0G-DS
Datasheet :
TSM4NC60CI C0G Datasheet
TSM4NC60CI C0G DatasheetCustomer # :
Description : MOSFET N-CH 600V 4A ITO220AB
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| Quantity | Unit Price | Total |
In Stock: 27
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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TSM4NC60CI C0G information
Taiwan Semiconductor TSM4NC60CI C0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack, Isolated Tab
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ITO-220AB
- Power Dissipation ( Max):40W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Tc)
- Rds On ( Max) @ Id, Vgs:2.5Ohm @ 1.3A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:18 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:654 pF @ 50 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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