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Taiwan Semiconductor TSM3N90CI C0G
MOSFET N-CH 900V 2.5A ITO220AB
Manufacturer # :TSM3N90CI C0G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM3N90CI C0G-DS
Datasheet :
TSM3N90CI C0G Datasheet
TSM3N90CI C0G DatasheetCustomer # :
Description : MOSFET N-CH 900V 2.5A ITO220AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 4.3600 | $ 4.36 |
| 5+ | $ 3.9200 | $ 19.6 |
| 25+ | $ 3.4600 | $ 86.5 |
| 100+ | $ 3.1200 | $ 312 |
In Stock: 1009
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 4.36
Total :$ 4.36
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TSM3N90CI C0G information
Taiwan Semiconductor TSM3N90CI C0G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3 Full Pack, Isolated Tab
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:ITO-220AB
- Power Dissipation ( Max):94W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):900 V
- Current - Continuous Drain ( Id) @ 25° C:2.5A (Tc)
- Rds On ( Max) @ Id, Vgs:5.1Ohm @ 1.25A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:17 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:748 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.29.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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