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Taiwan Semiconductor TSM2NB60CH C5G
MOSFET N-CHANNEL 600V 2A TO251
Manufacturer # :TSM2NB60CH C5G
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM2NB60CH C5G-DS
Datasheet :
TSM2NB60CH C5G Datasheet
TSM2NB60CH C5G DatasheetCustomer # :
Description : MOSFET N-CHANNEL 600V 2A TO251
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.8100 | $ 0.81 |
| 75+ | $ 0.6730 | $ 50.48 |
| 150+ | $ 0.4884 | $ 73.26 |
| 525+ | $ 0.4081 | $ 214.25 |
| 1050+ | $ 0.3473 | $ 364.67 |
In Stock: 18000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.81
Total :$ 0.81
Delivery :
Payment :
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TSM2NB60CH C5G information
Taiwan Semiconductor TSM2NB60CH C5G technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-251 (IPAK)
- Power Dissipation ( Max):44W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):600 V
- Current - Continuous Drain ( Id) @ 25° C:2A (Tc)
- Rds On ( Max) @ Id, Vgs:4.4Ohm @ 1A, 10V
- Vgs(th) ( Max) @ Id:4.5V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9.4 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:249 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±30V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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