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Taiwan Semiconductor TSM250N02DCQ RFG
MOSFET 2 N-CH 20V 5.8A 6TDFN
Manufacturer # :TSM250N02DCQ RFG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM250N02DCQ RFG-DS
Datasheet :
TSM250N02DCQ RFG Datasheet
TSM250N02DCQ RFG DatasheetCustomer # :
Description : MOSFET 2 N-CH 20V 5.8A 6TDFN
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.4950 | $ 0.5 |
| 10+ | $ 0.4239 | $ 4.24 |
| 100+ | $ 0.3105 | $ 31.05 |
| 500+ | $ 0.2655 | $ 132.75 |
| 1000+ | $ 0.2160 | $ 216 |
In Stock: 18000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.495
Total :$ 0.49
Delivery :
Payment :
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TSM250N02DCQ RFG information
Taiwan Semiconductor TSM250N02DCQ RFG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-VDFN Exposed Pad
- Power - Max:620mW
- Supplier Device Package:6-TDFN (2x2)
- F E T Type:2 N-Channel (Dual)
- F E T Feature:Standard
- Drain to Source Voltage ( Vdss):20V
- Current - Continuous Drain ( Id) @ 25° C:5.8A (Tc)
- Rds On ( Max) @ Id, Vgs:25mOhm @ 4A, 4.5V
- Vgs(th) ( Max) @ Id:800mV @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:7.7nC @ 4.5V
- Input Capacitance ( Ciss) ( Max) @ Vds:775pF @ 10V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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