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Taiwan Semiconductor TSM2311CX-01 RFG
MOSFET P-CH 20V 4A SOT23
Manufacturer # :TSM2311CX-01 RFG
Manufacturer :Taiwan Semiconductor
Dasenic # :TSM2311CX-01 RFG-DS
Datasheet :
TSM2311CX-01 RFG Datasheet
TSM2311CX-01 RFG DatasheetCustomer # :
Description : MOSFET P-CH 20V 4A SOT23
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| Quantity | Unit Price | Total |
In Stock: 84
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 0
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TSM2311CX-01 RFG information
Taiwan Semiconductor TSM2311CX-01 RFG technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:SOT-23
- Power Dissipation ( Max):900mW (Ta)
- F E T Type:P-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):20 V
- Current - Continuous Drain ( Id) @ 25° C:4A (Ta)
- Rds On ( Max) @ Id, Vgs:55mOhm @ 4A, 4.5V
- Vgs(th) ( Max) @ Id:1.4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:9 nC @ 4.5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:640 pF @ 6 V
- Drive Voltage ( Max Rds On, Min Rds On):2.5V, 4.5V
- Vgs ( Max):±8V
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:3 (168 Hours,30°C/60%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.21.0095
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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